S8558 is a 16-element si pin photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection. features l active area: 0.7 2.0 mm ( 16 elements) l ceramic chip carrier package for surface mount l suitable for solder reflow l high sensitivity applications l spectrophotometers l position detection photodiode si pin photodiode array surface mountable 16-element photodiode array S8558 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max.30 v operating temperature topr -40 to +100 c storage temperature tstg -40 to +125 c electrical and optical characteristics (ta=25 c, per 1 element) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm =660 nm -0.45-a/w =780 nm -0.57-a/w =830 nm -0.62-a/w photo sensitivity s = p -0.72-a/w short circuit current isc 100 lx - 1.0 - a dark current i d v r =10 v - 0.05 1.0 na temperature coefficient of i d t cid - 1.15 - times/ c cut-off frequency fc v r =10 v, r l =50 ? =830 nm, -3 db -25-mhz terminal capacitance ct v r =10 v, f=1 mhz - 5 10 pf noise equivalent power nep v r =10 v, = p - 5.6 10 -15 -w/hz 1/2 1
si pin photodiode array S8558 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photonics k.k. cat. no. kmpd1062e01 aug. 2006 dn dimensional outline (unit: mm) kmpda0144ea 0 0.2 0.4 0.8 0.7 0.5 0.3 0.1 200 400 600 800 1200 1000 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ?c) 0.6 qe=100 % 1 pa 10 pa 100 pa 1 na 0.01 0.1 1 10 100 reverse voltage (v) dark current (typ. ta=25 ? c) 1 pf 10 pf 100 pf 1 nf 0.1 1 10 100 reverse voltage (v) terminal capacitance (typ. ta=25 ? c) 1 mhz 10 mhz 100 mhz 1 10 100 reverse voltage (v) cut-off frequency (typ. ta=25 ? c, =830 nm, r l =50 ) p 0.8 15 = 12.0 p 1.27 8 = 10.16 0.6 4.85 2.0 2.5 6.50 13.70 15.35 index mark 0.4 0.7 2.0 ( 16 elements) active area (r0.15) (r0.25) index mark 0.4 tolerance unless otherwise noted: 0.25 chip position accuracy with respect to the package center x, y 0.3 ch1 ch16 1 3 5 7 9 11 13 15 kc 16 14 12 10 8 6 4 2 nc (0.8) 1.26 0.15 silicone resin photosensitive surface dark current vs. reverse voltage spectral response kmpdb0193ea kmpdb0194ea terminal capacitance vs. reverse voltage cut-off frequency vs. reverse voltage kmpdb0195ea kmpdb0196ea 2
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